About: Metal-induced crystallization

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Metal-induced crystallization (MIC) is a method by which amorphous carbon (a-C), amorphous silicon (a-Si), and (a-Ge) can be turned into their polycrystalline phases at relatively low temperatures. In the technologically important case of Si, a thin film of a-Si is deposited onto a substrate, usually glass, and then capped with a metal, such as aluminium (Aluminum-induced crystallization(AIC)). The structure is then annealed at temperatures between 150 °C and 400 °C which causes the a-Si films to be transformed into polycrystalline silicon.

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rdf:type	software yago:WikicatChemicalProcesses yago:ChemicalProcess113446390 yago:NaturalProcess113518963 yago:PhysicalEntity100001930 yago:Process100029677
rdfs:label	Metal-induced crystallization (en)
rdfs:comment	Metal-induced crystallization (MIC) is a method by which amorphous carbon (a-C), amorphous silicon (a-Si), and (a-Ge) can be turned into their polycrystalline phases at relatively low temperatures. In the technologically important case of Si, a thin film of a-Si is deposited onto a substrate, usually glass, and then capped with a metal, such as aluminium (Aluminum-induced crystallization(AIC)). The structure is then annealed at temperatures between 150 °C and 400 °C which causes the a-Si films to be transformed into polycrystalline silicon. (en)
dcterms:subject	Inorganic chemistry Crystallography Chemical processes Semiconductor device fabrication
Wikipage page ID	7104660 (xsd:integer)
Wikipage revision ID	1099436383 (xsd:integer)
Link from a Wikipage to another Wikipage	Amorphous carbon Amorphous silicon Inorganic chemistry Glass Aluminium (disambiguation) Temperature Crystallography Chemical processes Semiconductor device fabrication Polycrystalline Metal Celsius scale Thin film transistors dbr:Amorphous_germanium dbr:Amorphous_oxides
sameAs	Metal-induced crystallization Metal-induced crystallization Metal-induced crystallization Metal-induced crystallization
dbp:wikiPageUsesTemplate	dbt:More_citations_needed dbt:Reflist
has abstract	Metal-induced crystallization (MIC) is a method by which amorphous carbon (a-C), amorphous silicon (a-Si), and (a-Ge) can be turned into their polycrystalline phases at relatively low temperatures. In the technologically important case of Si, a thin film of a-Si is deposited onto a substrate, usually glass, and then capped with a metal, such as aluminium (Aluminum-induced crystallization(AIC)). The structure is then annealed at temperatures between 150 °C and 400 °C which causes the a-Si films to be transformed into polycrystalline silicon. In a variant of this method, called Metal-induced lateral crystallization (MILC), metal is only deposited on some area of the a-Si. Upon annealing, crystallization starts from the portion of a-Si which is covered by metal and proceeds laterally. Unlike MIC process, where metal contamination in the obtained polysilicon is relatively high, the laterally crystallized silicon in MILC process contains very small amount of metal contamination. The crystallization speed is low, but is adequate for applications such as fabrication of thin film transistors. In this case, metal is deposited on the source/drain area of the transistor and the channel is laterally crystallized. It has been also shown that applying an electric field increases the speed of lateral crystallization dramatically. Moreover, the crystallization proceeds unidirectionally. Recently metal-induced crystallization has been coupled with microwave-assisted crystallization lowering the crystallization temperature and time of amorphous titania. By suspending the amorphous powder in a salty solution containing one of various d-block or p-block elements, and microwaving, crystallization can be induced within a few minutes. (en)
gold:hypernym	Method
prov:wasDerivedFrom	wikipedia-en:Metal-induced_crystallization?oldid=1099436383&ns=0
page length (characters) of wiki page	3728 (xsd:nonNegativeInteger)
foaf:isPrimaryTopicOf	wikipedia-en:Metal-induced_crystallization
is Link from a Wikipage to another Wikipage of	Metal-induced lateral crystallization Metal-induced crystallisation Metal-induced lateral crystallisation MIC Polycrystalline silicon
is Wikipage redirect of	Metal-induced lateral crystallization Metal-induced crystallisation Metal-induced lateral crystallisation
is Wikipage disambiguates of	MIC
is foaf:primaryTopic of	wikipedia-en:Metal-induced_crystallization

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